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Plasma processor Sigma Silicon germanium trench molding control

Categories:Company Dynamics
Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
Origin:
Time of issue:2020-12-09
Views:

(Summary description)In type Р drain source area form sigma type silicon groove, need to through chemical vapor deposition, grow in the polysilicon gate oxide silicon film layer and the silicon nitride film layer. The silicon nitride film is used to form the side wall and control the distance from the ge silicon groove to the gate. The silicon oxide layer at the bottom is used as a silicon nitride plasma processor to etch a stop layer and a stress buffer layer. Then, the NMOS region is covered by photoresist and the PMOS region is exposed by photolithography. Then side walls need to be formed in the PMOS area. The main etching of the plasma processor on the side wall generally uses CF4 gas, which etches out most of the silicon nitride, so as not to contact the silicon of the lower substrate. CH3 F/O2 gas was used for over-etching to obtain a high selection ratio of silicon nitride to silicon oxide, and a certain amount of over-etching was used to remove the remaining silicon nitride. Silicon trench molding adopts plasma processor dry etching and wet etching combined process. The HBr/O2 gas process is adopted for bulk silicon etching in the inductively coupled silicon etching machine. It has a high selection ratio for the side wall and gate hard mask layer, which can effectively prevent the exposure of polysilicon gate and avoid the excess germanium silicon defects growing in the gate during the subsequent epitaxial process. This excess germanium silicon defect causes short-circuit failure of the gate and through hole. Ammonium tetramethyl hydroxide is used in wet etching. It is a colorless or yellowish liquid with amine-like odor and is easily soluble in water. Its solution is a strong alkaline solution, which is often used as a developing solution in semiconductor exposure process and also as an etching solution of silicon.

Plasma processor Sigma Silicon germanium trench molding control

(Summary description)In type Р drain source area form sigma type silicon groove, need to through chemical vapor deposition, grow in the polysilicon gate oxide silicon film layer and the silicon nitride film layer. The silicon nitride film is used to form the side wall and control the distance from the ge silicon groove to the gate. The silicon oxide layer at the bottom is used as a silicon nitride plasma processor to etch a stop layer and a stress buffer layer. Then, the NMOS region is covered by photoresist and the PMOS region is exposed by photolithography. Then side walls need to be formed in the PMOS area. The main etching of the plasma processor on the side wall generally uses CF4 gas, which etches out most of the silicon nitride, so as not to contact the silicon of the lower substrate. CH3 F/O2 gas was used for over-etching to obtain a high selection ratio of silicon nitride to silicon oxide, and a certain amount of over-etching was used to remove the remaining silicon nitride.

Silicon trench molding adopts plasma processor dry etching and wet etching combined process. The HBr/O2 gas process is adopted for bulk silicon etching in the inductively coupled silicon etching machine. It has a high selection ratio for the side wall and gate hard mask layer, which can effectively prevent the exposure of polysilicon gate and avoid the excess germanium silicon defects growing in the gate during the subsequent epitaxial process. This excess germanium silicon defect causes short-circuit failure of the gate and through hole. Ammonium tetramethyl hydroxide is used in wet etching. It is a colorless or yellowish liquid with amine-like odor and is easily soluble in water. Its solution is a strong alkaline solution, which is often used as a developing solution in semiconductor exposure process and also as an etching solution of silicon.

Categories:Company Dynamics
Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
Origin:
Time of issue:2020-12-09 10:30
Views:

Information

Plasma processor Sigma Silicon germanium trench molding control:

In type Р drain source area form sigma type silicon groove, need to through chemical vapor deposition, grow in the polysilicon gate oxide silicon film layer and the silicon nitride film layer. The silicon nitride film is used to form the side wall and control the distance from the ge silicon groove to the gate. The silicon oxide layer at the bottom is used as a silicon nitride plasma processor to etch a stop layer and a stress buffer layer. Then, the NMOS region is covered by photoresist and the PMOS region is exposed by photolithography. Then side walls need to be formed in the PMOS area. The main etching of the plasma processor on the side wall generally uses CF4 gas, which etches out most of the silicon nitride, so as not to contact the silicon of the lower substrate. CH3 F/O2 gas was used for over-etching to obtain a high selection ratio of silicon nitride to silicon oxide, and a certain amount of over-etching was used to remove the remaining silicon nitride.

Silicon trench molding adopts plasma processor dry etching and wet etching combined process. The HBr/O2 gas process is adopted for bulk silicon etching in the inductively coupled silicon etching machine. It has a high selection ratio for the side wall and gate hard mask layer, which can effectively prevent the exposure of polysilicon gate and avoid the excess germanium silicon defects growing in the gate during the subsequent epitaxial process. This excess germanium silicon defect causes short-circuit failure of the gate and through hole. Ammonium tetramethyl hydroxide is used in wet etching. It is a colorless or yellowish liquid with amine-like odor and is easily soluble in water. Its solution is a strong alkaline solution, which is often used as a developing solution in semiconductor exposure process and also as an etching solution of silicon.

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