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The effect of the oxidizing gas N2 on the conversion reaction under the action of plasma
The effect of the oxidizing gas N2 on the conversion reaction under the action of plasma: Influence of energy density Ed (kJ/mol) on CH4 conversion reaction: CH4 conversion and C2 hydrocarbon yield gradually increased with the increase of energy density, which means increasing plasma injection power and decreasing feedstock in flow reactor The air flow is beneficial to improve the conversion rate of CH4 and the yield of C2. When the energy density is 2000 kJ/mol, the CH4 conversion and C2 hydrocarbon yield can reach 52.7% and 40.9%, respectively. The relationship between energy density and CH4 conversion and C2 hydrocarbon yield is approximately logarithmic. When the energy density is lower than 1000kJ/mol, the CH4 conversion rate and C2 hydrocarbon yield increase rapidly with the increase of energy density; when the energy density exceeds 1000kJ/mol, the CH4 conversion rate and C2 hydrocarbon yield increase rapidly with the increase of energy density slow. It shows that in this reaction, the increase of energy density does not mean that the energy efficiency increases, on the contrary, there is a downward trend. Therefore, from the perspective of energy efficiency, an appropriate energy density should be selected. The effect of N2 addition on the CH conversion reaction in plasma: As the N2 concentration in the feed gas increases, the CH4 conversion rate increases, indicating that the inert gas N2 is present. Conducive to CH4 conversion. The yield of C2 hydrocarbons increased slightly with the increase of N2 addition amount, and the carbon deposition on the reactor wall decreased slightly with the increase of N2 addition amount. However, compared with the effect of H2 on the methane dehydrogenation coupling reaction, under the same experimental conditions, the yield of C2 hydrocarbons is lower and the amount of carbon deposition is higher. From the emission spectrum of CH-N2 plasma, it can be found that the characteristic peak of N2 and the spectral peak of CH at 431 nm are in the wavelength range of 400-440 nm. Since the cleavage energy of the N-N bond of nitrogen molecules is as high as 9.76 eV, the possibility of forming N atoms in pulsed corona plasma is relatively small, so the active particles in the CH4-N2 plasma system are excited to free molecules and methyl groups. Based on the main. The effect of O2 addition on methane plasma conversion reaction under the plasma energy density of 629 kJ/mol: Methane conversion increases with the increase of O2 addition, but the yield of C2 hydrocarbons (mainly C2H2) increases with the increase of O2 addition. gradually decreased. The research on adding gas to the methane plasma system shows that the addition of H2 or N2 not only promotes the conversion of methane, but also helps to improve the yield of C2 hydrocarbon products. The addition of O2 can effectively promote methane conversion, but the yield of C2 hydrocarbon products decreases.
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Typical applications of material processing technology for thin film plasma surface treatment machines
Typical applications of material processing technology for thin film plasma surface treatment machines: The plastic film is treated with plasma surface treatment machine treatment technology, and part or all of the material surface treatment can be selected. The mechanical properties of the material did not change before and after treatment. The equipment uses gases and nothing else to effectively clean, activate or coat these thin-film materials by selectively controlling process parameters such as temperature, nozzle position, width and speed. The advantages and characteristics of the plasma surface treatment machine technology for pretreatment of thin films: it has complete "on-line" integration capability (without affecting the original process operation), saves energy, reduces costs, protects the environment, does not change the mechanical properties of the thin film, and can achieve Selective, local cleaning, standard nozzle width, processable width: 2.20 meters or more, double-sided processing of films, effective surface activation, and long-lasting surface treatment effects; additives for surface precipitation The cleaning effect, eliminate the static effect. Good surface pretreatment of plasma surface treatment machine is a prerequisite to ensure the quality of subsequent coatings. For many companies, the environmentally friendly water-based coating process is the core link of their production. The application of plasma pretreatment technology makes water coating technology possible. The plasma surface treatment machine can remove oil and dust from the material, and give the material higher surface energy. The cleaning effect of plasma pretreatment technology can remove oil stains on the surface, the antistatic effect of plasma can remove dust particles attached to the surface, and the chemical reaction effect can increase the surface energy. The comprehensive effect of these aspects makes the plasma pretreatment technology. Becoming an efficient tool, in general, plasma pretreatment does not require additional cleaning steps and primer treatments. Typical applications of plasma treatment, reliable coating adhesion, and plasma surface treatment machine pretreatment technology include automotive and aviation industries, electronic appliances and household appliances manufacturing, daily necessities manufacturing and packaging industries. Pre-treatment ensures strong adhesion of surface coatings on metallic materials such as aluminum, plastic materials such as PP or EPDM, or other materials.
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Glass plasma spraying plasma cleaning machine surface activation cleaning treatment
Glass plasma spraying plasma cleaning machine surface activation cleaning treatment: Nowadays, when people buy perfume, they not only pay attention to the fragrance, but also pay attention to the packaging. The packaging is as important as the fragrance. At present, plasma cleaning machine technology is used before printing on perfume bottles of big brands. Traditionally, there are only three basic colors for glass production: white, green or brown. In order to produce more delicate glass packaging, many products, such as cosmetic packaging, go through a dyeing process, and metal beverage containers also need to be painted to attract end consumers. Advantages of cleaning and activation treatment before glass plasma spraying: Can be easily integrated into glass plasma spraying production line; reduce reject rate; use innovative glass spraying technology for plasma treatment; fine plasma cleaning machine to improve glass surface microstructure; plasma cleaning activation treatment before glass spraying. The advantages of plasma cleaning machine surface activation cleaning compared to traditional cleaning methods: It can handle samples of various shapes: for samples with complex shapes, plasma cleaning can find the right solution. No additional auxiliary items and conditions are required for the treatment process: the atmospheric plasma cleaner only needs 220 volts AC and CDA compressed air and no additional items and conditions are required. Low operating cost: fully automatic operation, 24-hour continuous operation, no need for manual supervision, operating power can be as low as 600W. Stable treatment effect: The treatment effect of plasma cleaning is very uniform and stable, and it maintains a good effect for a long time after conventional sample treatment. There is no pollution in the whole processing process: the plasma cleaning machine itself is a very environmentally friendly equipment, which does not produce any pollution, nor does it produce any pollution during the processing. The plasma cleaning machine has high processing efficiency and can realize fully automatic online production: as long as the surface of the sample is treated in a short time, the plasma cleaning in the atmosphere can achieve the effect within 2 seconds. It can be matched with the original production line to realize fully automatic online production and save labor costs. Low processing temperature: The processing temperature can be as low as 80 °C and below 50 °C, and the low processing temperature can ensure that there is no thermal shock to the surface of the sample.
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High-tech surface treatment processes using plasma technology to clean activated and coated surfaces
High-tech surface treatment processes using plasma technology to clean activated and coated surfaces: Pretreatment - Plasma technology, a high-tech surface treater process for cleaning, activating and coating surfaces. Plasma surface treatment machine application treatment is one of the effective treatment processes for cleaning, activating and coating surfaces, and can be used to treat a variety of materials, including plastics, metals, ceramics, polymeric materials or glass. Using plasma technology to clean the surface can remove the release agent and additives on the surface, and the activation process can ensure the quality of the subsequent bonding process and coating process. For the coating treatment, the surface properties of the composite material can be further improved. Using this plasma technology, we can efficiently pretreat material surfaces according to specific process requirements. Plasma surface treatment machine pretreatment and cleaning create ideal surface conditions for subsequent coating of plastics, aluminium and even glass. Plasma cleaning is a stable and efficient process because the plasma cleaning is a "dry" cleaning process, and the material can go to the next process immediately after being treated. Due to the high energy of the plasma, chemical substances or organic pollutants on the surface of the material can be decomposed, and all impurities that may interfere with adhesion can be effectively removed, so that the surface of the material can reach the optimal conditions required by the subsequent coating process. Plasma surface treatment machine application technology can be used for surface activation of many materials, including plastics, metals, glass, textiles, etc. Both coating and bonding of treated surfaces are necessary process steps to effectively activate the surface of a material. Polypropylene, polyethylene, acrylonitrile-butadiene-styrene copolymer, polyester, polystyrene, EPDM, PTFE, etc. Usually the surface energy is low and not fully penetrated, which makes their surfaces difficult to paint, print and bond, even some organic materials, metals, silicone rubber, glass ceramics, etc. It is difficult to coat and bond, or they have to pay a high price to solve these problems with specialized polymer products. Plasma treatment can significantly improve adhesion. With the help of plasma surface treatment machine application technology and low-cost materials, new, high-quality high-function materials can be produced. Plasma Surface Treatment Machine Plasma spraying technology is very suitable for selective coating treatment, which greatly expands the application field of this technology. PET film, aluminum foil, textiles, glass, various plastics, metals, precious metals can be coated by plasma technology. Using this technique, materials can also be hardened, for example, in the production of cutting tools, and plastic products with adhesion-promoting or self-adhesive surfaces can also be produced.
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Several points to be noted in the planning of low-temperature plasma power integrity power system
Several points to be noted in the planning of low-temperature plasma power integrity power system: Analysis of low-temperature plasma power integrity power system noise margin Most chips will give a normal operating voltage range, usually ±5%. The output voltage accuracy of the traditional voltage stabilizer is generally ±2.5%, so the peak amplitude of the power supply noise should not be greater than ±2.5%. Accuracy is conditional, including load conditions, working temperature and other restrictions, so there must be margin. Second, the calculation of the noise margin of the low-temperature plasma power supply of the whole machine. For example, the normal working voltage of the chip is 3.13V to 3.47V, and the nominal output of the voltage regulator chip is 3.3V. The whole machine is installed on the circuit board, and the power supply voltage regulator chip of the whole machine outputs 3.36V. Then, the allowable voltage change range is 3.47-3.36=0.11V=110 millivolts. The output accuracy of the voltage stabilizer is ±1%, that is, ±3.363*1%=±33.6 mV. The power system noise margin is 110-33.6=76.4 millivolts. 3. How does the power supply noise of the low-temperature plasma power supply rectifier generate? The output of the stabilized power supply chip itself is unstable and will fluctuate to a certain extent. The second is that the regulated power supply cannot respond to the rapid changes in the current requirements of the load in real time. The rectifier power supply stabilized power supply chip senses the change of its output voltage and adjusts its output current to return it to the rated output voltage. Third, the voltage drop caused by the load transient current on the impedance of the power path and the impedance of the ground path. The pins and pads themselves will have parasitic inductance. When the transient current flows through the channel, a voltage drop will inevitably occur. Therefore, power integrity Therefore, the voltage at the power supply pin of the load chip will fluctuate with the change of the transient current, which is the power supply noise generated when impedance occurs.
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Plasma etching cleaning machine ICP etching technology is widely used in SiC etching applications
Plasma etching cleaning machine ICP etching technology is widely used in SiC etching applications: Reaction-bonded silicon carbide (RB-SiC), as a new type of ceramic material, has the characteristics of high strength, specific stiffness, large thermal conductivity and small expansion coefficient. With the rapid development of optical technology, optical systems are moving towards large-diameter, low-caliber The development of loss and lightweight requires optical components with high resolution, wide field of view, and high-quality surface topography RB-SiC material has been widely used due to its superior performance, which puts forward higher requirements on the optical quality of the surface of the material. There are many methods for processing SiC, mainly including electrochemical corrosion, mechanical processing, ultrasonic processing, laser etching and plasma dry etching. The plasma dry etching technology of plasma etching cleaner mainly includes reactive ion etching (RIE), electron cyclotron resonance (ECR) and inductively coupled plasma (ICP). ICP etching equipment has the advantages of selectivity and anisotropic structure, simple operation, convenient control, etc. Therefore, ICP etching technology is widely used in SiC etching applications.    Plasma Etching Cleaner ICP etching technology is mainly used in the processing and production of SiC semiconductor devices and micro-electromechanical systems (MEMS) devices, etching the surface quality, and improving the performance and quality of SiC microwave power devices. The complete etching process of ICP etching technology can be divided into three steps: ① adsorption of etched substances; ② formation of volatiles; ③ desorption. It includes two processes, chemical and physical: in the chemical process, the etching gas generates active radicals, metastable particles and electrons through inductive coupling through glow discharge, and the neutral particles diffuse to the surface of the substrate and are etched. The atoms on the material surface chemically react to produce volatile substances, and these by-products are drawn out of the chamber by the vacuum system to achieve gas chemical etching. In addition, the physical process is through ion bombardment of the etched substrate surface. Unlike sputter etching, the physical bombardment here is mainly to destroy chemical bonds and lattice sequences, accelerate the desorption of reactants, and promote the chemical reaction process. Carry out and remove non-volatile products on the surface. In the etching process of the plasma etching cleaner ICP, the substrate bias voltage provides energy for the plasma, enabling active particles to act on the surface of the substrate. The power determines the kinetic energy of the plasma. These high-energy active particles are in the etching process. , Plays an important role. Compared with the etching before and after the etching, the surface quality has declined. Analyze the reason. The active particles generated by the ICP etching glow discharge diffuse to the surface of the substrate and the chemical reaction will generate some non-volatile products, which is too late for desorption and deposition. To the surface of the substrate. In addition, some ions have physical bombardment on the substrate, destroying the surface lattice array, causing holes and pits on the surface of the substrate, resulting in a decrease in the surface quality of the material. At the same time, the structure of the original substrate is not uniform due to the presence of two-phase components of silicon and silicon carbide. The non-uniformity of the two-phase boundary, holes and pits on the surface of the material after plasma etching by the plasma etching cleaner will cause the scattering of light on the surface of the material, and the holes will also increase the absorption of light by the material. The surface reflectivity decreases and the surface roughness increases.
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