Chengfeng Zhizao Plasma introduces the importance of ethylene as a chemical raw material for industrial development
Chengfeng Zhizao Plasma introduces the importance of ethylene as a chemical raw material for industrial development: The mixed gas of methane and ethane widely exists in natural gas, oilfield gas, refinery gas and catalytic cracking gas, and the relative content of ethane is small. Separating and purifying methane and ethane and then utilizing them separately is costly. Without separation, directly using methane containing part of ethane as raw material to carry out the conversion reaction is a practical need from many occasions. The proven oil reserves in my country are 2.27×1017t and the natural gas reserves are 1.97×1021 m3. With the continuous development and utilization of the above resources, the amount of ethane in natural gas, oilfield gas, refinery gas and catalytic cracking gas will increase sharply. . Therefore, it is necessary to carry out the research on the ethane conversion reaction, which is of great significance for the rational utilization of ethane. As an important organic chemical raw material, ethylene is one of the symbols to measure the development level of a country's chemical industry. As we all know, the production of ethylene from ethane has always been one of the main processes of petrochemical industry. The traditional method is high-temperature cracking and dehydrogenation, which is a strong endothermic process. It not only requires high temperature (generally higher than 850 °C), but also needs to be carried out under negative pressure (adding a large amount of superheated steam for dilution), which consumes a lot of energy. , the operation is complicated, and the product separation is very difficult. If catalytic dehydrogenation is used, the reaction temperature can be lower than that of pyrolysis dehydrogenation, but it still has its limitations and is not sufficiently competitive. Moreover, with the continuous depletion of petroleum resources, the potential for preparing raw material ethylene from petroleum is nearly exhausted, and it is difficult to compete with petrochemicals economically from coal, and the oxidative dehydrogenation of gaseous alkanes is a realistic and effective way to fill this gap. way. Under the situation of increasingly tight energy supply, further efficient utilization of gaseous carbon resources has important strategic significance.
Surface modification of bamboo powder/PETG composites by low temperature plasma treatment technology
Surface modification of bamboo powder/PETG composites by low temperature plasma treatment technology: Wood-plastic composite material is a composite material made of thermoplastics and bamboo fibers with a small amount of chemical additives and fillers and other auxiliary agents, through a special composite method, and has the dual characteristics of plastic and bamboo, that is, it has the following Advantages: good acid and alkali resistance, chemical resistance, salt water resistance, can be used at low temperature, UV resistance, no rot, no cracking or warping and other mechanical properties, low price, long service life, easy to shape, easy to process , recyclable, no formaldehyde and other harmful gas release, etc., has been widely used in automobile manufacturing, construction, transportation, packaging and other fields. However, due to the poor wettability and poor adhesion of the surface of the bamboo-plastic composite material, the bonding process on the surface is greatly affected. In order to improve the wettability of the material surface, the ideal modification method is low temperature plasma treatment technology. Plasma is an ionized gas-like substance", containing electrons, positive ions and neutral particles, a high-energy aggregate of various particles. Plasma is divided into high-temperature plasma and low-temperature plasma according to temperature. Usually, low temperature plasma Plasma treatment techniques are used for the modification of material surfaces. The energy of the active particles in the plasma of low temperature plasma treatment technology is generally close to or exceeds the bond energy of C-C or other carbon bonds, which will modify the surface of the composite material and cause complex physical and chemical changes on the surface of the material, such as Etching, cross-linking, etc. to improve the contact angle and surface energy of the polymer surface. The increase of plasma discharge power of low temperature plasma treatment technology increases the number of active particles in the plasma atmosphere, the energy increases, the etching effect of active particles on the surface of the sample is strengthened, the contact angle of the surface of the sample decreases, and the surface of the sample decreases. Wetting is improved. With the increase of the discharge power, the contact angle of the sample surface increases with the increase of the discharge power. As the treatment time increases, the thickness of the oxide layer increases and the polarity of the oxygen-containing functional groups increases. After low-temperature plasma treatment of the sample, the water absorption rate of the sample increases with the increase of the low-temperature plasma discharge power; after the low-temperature plasma treatment of the sample, the water absorption rate of the sample decreases with the increase of the low-temperature plasma discharge power . This is because after the low-temperature plasma treatment technology plasma treats the sample, increasing the low-temperature plasma discharge power will promote the conversion of inactive particles inside the low-temperature plasma into active particles with higher energy that are easy to participate in the reaction, which is beneficial to the low-temperature plasma. The reaction between the body and the surface of the sample increases the oxygen content on the surface of the sample, the number of polar oxygen-containing functional groups increases, and the water absorption rate increases. With the further increase of the power, the energy obtained by the active particles from the electric field increases, and the probability of the particles colliding with each other increases, resulting in the loss of particle energy and the weakening of the molecular interaction between the active particles and the sample surface, resulting in wetting. The relative decline of the property, the water absorption rate decreased. This is because with the increase of treatment time, the number of polar oxygen-containing functional groups introduced on the surface of the sample increases, and the surface polarity increases. Low-temperature plasma treatment technology After plasma treatment, the amount of -COC on the surface of the sample increases, but with the increase of low-temperature plasma treatment time, the amount of -COC on the surface gradually decreases. The oxide layer thickens, and the attractive -COC on the surface of the sample is further oxidized to -C=O.
Pipe and wire plasma cleaning machine surface treatment to improve the surface tension of non-polar plastics
Pipe and wire plasma cleaning machine surface treatment to improve the surface tension of non-polar plastics: The tube wire has a low surface tension, which can adhere well to the paint surface. Surface tension can be maximized in many cases (in fact all cases) to achieve the desired adhesion by using plasma cleaning machine surface treatments. Scenarios for plasma surface activation and cleaning of pipes and wires: The surface of the material is activated by plasma cleaning using an oxygen plasma cleaner and then the plastic wires are etched. This can increase their surface energy. When cleaning the pipe, it is important to increase the surface area, which promotes good bonding. Plasma surface cleaning and activation process: The effect of oxygen plasma on the surface tension of non-polar plastics is obvious. The reason is that, due to the high reactivity of oxygen radicals, polar bonds are formed, which constitute the adhesion points of the coating liquid. In this way, the surface tension is increased, wetting is accelerated and the adhesion is improved.
Introduction of plasma surface activation cleaning treatment of glass cover plate
Introduction of plasma surface activation cleaning treatment of glass cover plate: According to the requirements of the glass cover plate production line, plasma surface treatment equipment can be used to treat the products. The optional equipment includes: atmospheric plasma cleaning machine, wide-width linear plasma equipment, etc. The energy of the ions and electrons of the plasma can reach 6 eV or even higher. Its major feature is that the ejected plasma is neutral and has no charge. The surface of the treated material can be activated, cleaned and etched in-line. At atmospheric pressure, the plasma size of each nozzle is: diameter ranging from 15 to 90 mm, and nozzle length ranging from 20 to 30 mm. According to the product size and processing width requirements, the online processing glass cover plate plasma cleaning machine equipment can be flexibly selected. The principle of surface activation and cleaning treatment of glass cover plasma cleaning machine: Plasma is composed of a large number of free electrons and ions, and is an ionized gas that is close to neutrality on a macroscopic scale. It is another aggregation state of matter, that is, plasma state, that is, the fourth state of matter. The electrons in the plasma get energy from the electric field, transform into free high-energy electrons, collide with atoms and molecules in the gas, produce excitation and ionization, and generate excited molecules, while atoms, ions and free radicals are extremely unstable, chemical reactions It has strong properties and is prone to reactions that generally cannot occur, resulting in new compounds or weightlessness of the treated material. During processing, the surface layer is etched, resulting in new properties (eg, weight loss, moisture absorption, deepening, adhesion, etc.); or leading to cross-linking, grafting, and polymerization. Plasmas are very different from ordinary gases in their properties. The temperature of electrons in plasma can reach several thousand to tens of thousands of K, while the temperature of gas is very low, about hundreds of degrees Celsius at room temperature, and the energy of electrons is about a few to a dozen electron volts. This energy is greater than the bond energy of polymer materials (several to dozens of electron volts), and can completely break the chemical bonds of organic molecules, thereby generating new bond energy; however, it is much lower than high-energy rays, only with It is related to the surface of the material, so it does not affect the matrix properties. If you have any questions or want to know more, please feel free to consult Chengfeng Zhizao plasma technology manufacturer.
The radio frequency plasma cleaner plays an important role in improving the working reliability of GaAs semiconductor devices
The radio frequency plasma cleaner plays an important role in improving the working reliability of GaAs semiconductor devices: GaAs has excellent optoelectronic properties and is a widely used semiconductor material in II-V compound semiconductors. However, the dangling bonds on the surface of GaAs materials are easily combined with impurities or oxygen elements, forming impurity defects and oxide layers on the surface, becoming non-radiative recombination centers, affecting the light-emitting characteristics of the material, and can bring serious consequences to the optoelectronic characteristics of GaAs semiconductor devices. Influence. Passivating the GaAs surface can not only reduce the surface impurity concentration, eliminate non-radiative recombination centers, and improve its photoelectric performance, but also the passivation protective layer can prevent the GaAs surface from combining with oxygen in the atmosphere and being re-oxidized , It plays an important role in improving the working reliability of GaAs semiconductor devices. Sulfur passivation of GaAs semiconductor materials can form sulfur-containing compounds on the surface, which can significantly improve the physical and chemical properties of the GaAs surface. Using the plasma processing method of a radio frequency plasma cleaner, the sulfur-containing Ar plasma is guided to bombard the GaAs sample, so that the sulfur reacts with the GaAs to form a thicker sulfur-containing passivation layer, and the passivation effect can be maintained for a long time. The method has strong controllability, avoids the influence of the strong corrosion effect of wet sulfur passivation, and provides new technical means for improving the performance of GaAs-based semiconductor optoelectronic devices and increasing their working life. Use the Ar glow discharge of a radio frequency plasma cleaner to clean the surface of the sample with low power to remove the surface oxide layer. Then the sulfur element is heated, and the sulfur partial pressure in the vacuum chamber can be adjusted appropriately by changing the heating temperature. Then through Ar, using Ar plasma induction, the sulfur vapor is discharged to generate sulfur plasma, which reacts with the CaAs sample on the slide table to generate stable sulfur-containing compounds on the surface of the sample. In order to adjust the partial pressure of sulfur vapor in a wider range, we appropriately control the pumping rate of the vacuum system by adjusting the vacuum baffle to ensure that there is sufficient and stable sulfur vapor concentration in the cavity to participate in the surface reaction of the sample. After Ar plasma cleaning by a radio frequency plasma cleaner, the PL intensity is slightly higher than that of the untreated GaAs sample. This is because Ar plasma has a cleaning effect on the oxide layer on the GaAs surface, which reduces the non-radiative recombination of the GaAs surface and improves the efficiency of photoluminescence. The PL intensity of the sample treated with sulfur-containing plasma is 104% higher than that of the sample bombarded by Ar plasma alone, indicating that the sulfur plasma has a good surface passivation effect. Compared with the untreated sample, the PL peak intensity increased by 71%, and after annealing, the peak wavelength of the plasma sulfur passivated sample was restored. The passivation of GaAs samples by sulfur plasma will not cause obvious impurity pollution, especially the passivation effect is relatively stable, which is more suitable for the passivation process of GaAs optoelectronic devices. The surface of the GaAs substrate was subjected to dry sulfur passivation using a radio frequency plasma cleaner method. The passivation effect of radio frequency plasma is affected by substrate temperature, sputtering power, and degradation temperature. By optimizing the sulfur plasma passivation conditions, the PL intensity of the sample was increased by 71%, and it showed better PL stability.
The importance of plasma plasma processor cleaning organic field effect transistor (OFET) materials
The importance of plasma plasma processor cleaning organic field effect transistor (OFET) materials: Organic Field Effect Transistor (OFETS) is an active device that can change the conductivity of the semiconductor layer by changing the gate voltage, and then manipulate the current flowing through the source and drain. As the basic element in the circuit, the organic field effect transistor has received extensive attention and has been developed rapidly due to its advantages of low power consumption, high impedance, low cost, and large area production. Its components are mainly composed of electrodes, organic semiconductors, heat insulation layers and substrates. These components have a great influence on the performance of OFETs. The electrode, organic semiconductor, insulating layer and substrate are processed by a plasma plasma processor to improve the function of the material. 1. The substrate substrate-plasma plasma treatment machine plasma treatment, remove the substrate surface impurities, improve surface activity The substrate is generally on the bottom layer of the transistor, and the header plays a supporting role. It can be used as the substrate material of OFET: glass, silicon wafer, quartz, polycarbonate (PC), polyethylene naphthalene (PEN), polyimide (PI), polyethylene (PET), etc. Inorganic substrates have the advantages of high melting point and smooth surface, such as glass, silicon wafer, and quartz. Although the surface looks rough, these data show elastic and flexible materials like polyethylene naphthalene (PEN) and polyethylene (PET). The substrate processed by plasma plasma processing machine needs to be processed in the preparation stage to remove impurities on the surface of the substrate and improve surface activity. 2. Electrode treatment-plasma plasma treatment machine plasma treatment In organic field-effect transistors (OFETs), electrodes are another important component. It is generally believed that when the electrical barrier height of the organic semiconductor layer/electrode interface is △E<0.4eV, an ohmic contact can be formed between the electrode and the organic semiconductor layer. For P-type OFETs, the occupied orbital energy level is -4.9 eV to -5.5eV, and a higher work function is required. Commonly used ones are Au (-4.8eV-5.1eV) and ITO (-5.1eV). Ordinary ITO requires an improved work function due to its low work function, so it can be improved with a quasi 13.56MHz frequency VP-R3 plasma processor. 3. Insulation layer treatment-PLASMA plasma retouches the silicone surface to improve the compatibility of materials When the plasma plasma processor is running, the charge is first accumulated and transferred on the contact surface between the semiconductor and the insulating layer. In order to ensure that the gate leakage current between the gate electrode and the organic semiconductor is small, the insulating layer data is required to have a higher resistance. It requires better insulation. At present, the commonly used insulating layer data is first of all inorganic insulating layers, such as oxide layers. During this period, silicon dioxide is the insulating layer generally used in organic field-effect transistors. However, due to the existence of certain defects on the surface of silicon dioxide, in addition to its Number with organic semiconductors
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