Microelectronic plasma cleaning machine equipment processing application

• Categories:Company Dynamics
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2020-12-05
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(Summary description)The development of microelectronics has fused information, communication and entertainment. The miniaturization of microelectronic devices is made possible by means of plasma technology. In the 1990s, plasma technology entered the field of microelectronic device manufacturing. The following will explore the plasma cleaning machine equipment in the core processing applications (examples of etching, deposition and doping).   In the late 1970s and early 1980s, plasma technology has become a key technology in IC manufacturing process. Today, 30% of the manufacturing process uses plasma. The global microelectronics industry bought $17.6 billion worth of plasma cleaning equipment in 1999, which produced $245 billion worth of chips. At present, plasma treatment technology has been widely used in the production of DRAMS, SRAIMS, MODFETS, thin insulated gate oxide layer and new photoelectric materials, such as silicon and germaniumalloy, high-temperature electronic materials (diamond or diamond-like carbon film), silicon carbide, cubic boron nitide and other materials and components.   The raw materials for semiconductor devices are crystalline silicon or amorphous thin films. The main process for producing A-SI :H is plasma chemical vapor deposition. Plasma chemical vapor deposition process is used to generate ionic components, and these ionic components participate in the reaction, so as to realize the deposition on the basement surface. Compared with traditional chemical vapor deposition (CVD) processes, plasma CVD processes can generate ionic components at temperatures far lower than those of conventional CVD processes, and can also modify films by ion bombardment. The precursor film of plasma chemical vapor deposition process is usually SH4 gas diluted by inert gas, and the reaction product is hydrogenated amorphous silicon film.   The application of plasma cleaning machine in deposition process can be divided into four steps. (1) The electron collision reaction between the electron and the reaction gas produces ions and free radicals; (2) The active ingredients are transmitted from the plasma to the base surface; (3) The active ingredients are deposited on the surface of the substrate by adsorption or physicochemical action; (4) The active ingredient or reaction product becomes the component of the deposition film. In the process of high density plasma chemical vapor deposition, deposition and etching are often carried out simultaneously. In this process, three main mechanisms are: plasma ion assisted deposition, argon ion sputtering and sputtering material redeposition. A high density plasma source (e.g., inductively coupled plasma (ICP), electron cyclotron resonance plasma (ECR), or helicon) was prepared by chemical vapor deposition (HDPCVD) to excite a mixture of gases containing silane, oxygen, and argon. With the base as the cathode, the high-energy positive ions in the plasma will be attracted to the crystal surface, and then the oxygen will react with silane to produce silane, and then the oxygen will be removed by argon ion sputtering.   There are two kinds of printing line platemaking techniques commonly used in semiconductor manufacturing, and they complement each other. One is to print the dielectric onto the metal surface, and the other is to insert the metal into the dielectric plate. The former is the ion etching (RIE) platemaking technique. The operation steps are as follows: (1) A metal layer with uniform thickness is deposited on the wafer surface; (2) Then evenly coat the surface with a layer of photosensitive polymer, namely photoresist; (3) The circuit pattern is transmitted to the photolithographic surface by optical means to change its solubility; (4) Remove the soluble part with a reactive etchant to form a mask layer; (5) Remove metal etching without mask layer protection; (6) The photoresist was removed by plasma removal; (7) Deposition passivation surface of silicon dioxide or silicon nitride.   The other is mosaicism, which is inspired by the ancient jewelry mosaicism, or Damascus mosaicism. The process requires that the grooves are etched in the dielectric plane, and then the grooves are filled with metal by metal deposition process, so as to embed the desired circuit in a plane. After being coated with an insulating layer, the next metal film can be reembedded.