Plasma surface processor gas cluster ion beam etching technique

• Categories:Industry News
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2020-12-01
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(Summary description)Plasma surface processor gas cluster ion beam etching has a series of characteristics that traditional plasma etching does not have. In conventional plasmas, electrons and ions have a wide energy distribution, and a few high-energy particles can penetrate several layers of atoms to damage the substrate during etching on the target material. Therefore, how to optimize the energy distribution of plasma ions in plasma surface treatment is always a development direction of plasma etching technology.   The gas cluster ion beam has an outstanding advantage in this respect. A gas cluster is a relatively stable aggregate composed of several to tens of thousands of atoms or molecules under the action of physics or chemistry. Gas clusters can be ionized under electron bombardment, and ionized gas clusters can obtain great kinetic energy under the action of electric field, and can also be filtered under the action of magnetic field, so as to obtain gas cluster ion beam with more concentrated energy distribution. Plasma surface processor gas cluster ion beam can obtain high energy under the action of accelerating electrode, form high energy density in a local area, and excite many kinds of physical and chemical reactions near the target material surface. But the velocity of each particle in the cluster is interphase, and the average energy of each particle is low. Therefore, at the same average energy as the traditional plasma, the energy of the particles is much better than the plasma, and will not cause damage to the deep atoms of the target material during the process of reacting with the target material.   This advantage makes gas cluster ion beam can be used well in many aspects. Examples include surface smoothing, surface analysis, shallow injection, film deposition, particle removal, etching, etc. With the increase of energy, different reactions such as gas cluster deposition, gas cluster etching and gas cluster shallow injection are introduced. The specific methods of producing clusters by PLASMA surface processors include gas accumulation, ultrasonic expansion, laser evaporation, magnetron sputtering, ion sputtering, arc discharge, electroinjection liquid metal method and helium droplet extraction method.