Application of plasma etching technology in chip integrated circuit manufacturin

• Categories:Industry News
• Author:Plasma cleaning machine-CRF plasma plasma equipment-plasma surface treatment machine manufacturer-chengfeng intelligent manufacturing
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• Time of issue:2021-10-11
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(Summary description)Application of plasma etching technology in chip integrated circuit manufacturing: Plasma etching is one of the key processes in the manufacture of chip integrated circuits. Its purpose is to completely copy the mask pattern to the surface of the silicon wafer. Its scope covers the control of the size of the front-end CMOS gate, as well as the etching and etching of the back-end metal aluminum. Etching of Via and Trench. Today, no integrated circuit chip can be completed without plasma etching technology. The investment in etching equipment accounts for about 10% to 12% of the equipment investment in the entire chip factory, and its technological level will directly affect the quality of the product and the advancement of production technology. It was reported very early that the literature on plasma etching technology was published in Japan in 1973, and soon attracted the attention of the industry. The parallel electrode etching reaction chamber (Reactive Ion Etch-RIE), which is still widely used in chip integrated circuit manufacturing, was proposed in 1974. This kind of reaction chamber consists of the following items: a vacuum chamber and a vacuum system, a gas system for providing different gas types and flow rates, a radio frequency power supply and its regulating and matching circuit system. The principle of plasma etching can be summarized as the following steps: 1. Under low pressure, the reaction gas is excited by radio frequency power to produce ionization and form plasma. The plasma is composed of charged electrons and ions. The gas in the reaction chamber is converted into ions under the impact of electrons. , Can also absorb energy and form a large number of active groups; 2. The active reactive group and the surface of the etched substance form a chemical reaction and form a volatile reaction product; 3. The reaction product separates from the surface of the etched material and is drawn out of the cavity by the vacuum system. In a plasma reaction chamber with parallel electrodes, the etched object is placed on an electrode with a smaller area. In this case, a DC bias voltage will be formed between the plasma and the electrode and cause a positively charged reaction. The gas ions accelerate to hit the surface of the etched material. This ion bombardment can greatly accelerate the chemical reaction on the surface and the desorption of reaction products, resulting in a high etching rate. It is precisely because of the existence of ion bombardment that all directions The opposite sex is etched. There are many types of plasma etching technology, such as pure physical etching, pure chemical reactive etching, and so on. Etching can be divided into wet etching and dry etching. The etching method used in the early chip semiconductor manufacturing process is wet etching, that is, using a specific chemical solution to decompose the part of the film to be etched that is not covered by photoresist, and convert it into a compound that is soluble in the solution, and then eliminate it to achieve etching. the goal of. Plasma is a state of existence of matter. Generally, matter exists in three states: solid, liquid, and gas, but in some special cases, there is a fourth state, such as the ionosphere in the earth’s atmosphere. The following substances exist in the plasma state: electrons in a state of high-speed motion; neutral atoms, molecules, and groups of atoms (radicals) in an activated state; ionized atoms and molecules; unreacted molecules, atoms, etc., but the substance is in the whole The electrical neutral state is still maintained. In the vacuum chamber, a high-energy disordered plasma is generated by the radio frequency power supply under a certain pressure, and the surface of the product is cleaned by plasma bombardment. In order to achieve the purpose of cleaning.