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Semiconductor principle of vacuum plasma cleaning machine
- Categories:Industry News
- Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
- Origin:
- Time of issue:2020-12-22
- Views:
(Summary description)With the development of modern electronics technology, Flip - ChipBond semiconductor packaging technology has been widely applied, but as a result of the front-end technology requirements, the machining process will inevitably some residual organic matter or other contaminants on the base material, in the baking process, originally under the pad of gold plating Ni element will be moved to the surface layer, without removal of pollutants, leads to bump on the semiconductor chip in Flip - ChipBond technology with the whole process of pad bonding effect is poor, adverse consequences. Traditional cleaning processing technology such as CFC cleaning, ODS cleaning, due to environmental pollution, high cost, limited the further development of modern electronic equipment technology, especially precision mechanical equipment manufacturing semiconductor chips, so the plasma cleaning machine dry cleaning, especially plasma cleaning technology is the current development trend. There are two cleaning methods of vacuum plasma cleaning machine. One is the reaction of plasma on the material surface, common gases, such as argon (AR), nitrogen (N2), etc. The other is that the oxygen radical has undergone chemical changes. The common gases are hydrogen, oxygen, and so on. Vacuum plasma cleaning machine plasma through impact to destroy the ionic bond of organic matter, so as to remove surface pollutants. When the working pressure is low, the higher the ion energy, the greater the kinetic energy and the greater the impact force. If the physical reaction is used for cleaning, it reflects the lower working pressure and the stronger the actual cleaning effect. Selecting argon gas as the advantages of vacuum plasma gas cleaning, cleaning principle of argon plasma technique is to use particle mechanical cleaning, argon gas is inert gas, in the process of cleaning will not cause chemical reaction products and gas, avoid secondary pollution, as the front-end processing residual residue can be reasonably clear, in the process of making a semiconductor can be fused in the bonding process. Compared with the traditional wet cleaning process, the plasma technology of vacuum plasma cleaning machine is environmentally friendly and cheap.
Semiconductor principle of vacuum plasma cleaning machine
(Summary description)With the development of modern electronics technology, Flip - ChipBond semiconductor packaging technology has been widely applied, but as a result of the front-end technology requirements, the machining process will inevitably some residual organic matter or other contaminants on the base material, in the baking process, originally under the pad of gold plating Ni element will be moved to the surface layer, without removal of pollutants, leads to bump on the semiconductor chip in Flip - ChipBond technology with the whole process of pad bonding effect is poor, adverse consequences.
Traditional cleaning processing technology such as CFC cleaning, ODS cleaning, due to environmental pollution, high cost, limited the further development of modern electronic equipment technology, especially precision mechanical equipment manufacturing semiconductor chips, so the plasma cleaning machine dry cleaning, especially plasma cleaning technology is the current development trend. There are two cleaning methods of vacuum plasma cleaning machine. One is the reaction of plasma on the material surface, common gases, such as argon (AR), nitrogen (N2), etc. The other is that the oxygen radical has undergone chemical changes. The common gases are hydrogen, oxygen, and so on. Vacuum plasma cleaning machine plasma through impact to destroy the ionic bond of organic matter, so as to remove surface pollutants. When the working pressure is low, the higher the ion energy, the greater the kinetic energy and the greater the impact force. If the physical reaction is used for cleaning, it reflects the lower working pressure and the stronger the actual cleaning effect.
Selecting argon gas as the advantages of vacuum plasma gas cleaning, cleaning principle of argon plasma technique is to use particle mechanical cleaning, argon gas is inert gas, in the process of cleaning will not cause chemical reaction products and gas, avoid secondary pollution, as the front-end processing residual residue can be reasonably clear, in the process of making a semiconductor can be fused in the bonding process. Compared with the traditional wet cleaning process, the plasma technology of vacuum plasma cleaning machine is environmentally friendly and cheap.
- Categories:Industry News
- Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
- Origin:
- Time of issue:2020-12-22 11:00
- Views:
Semiconductor principle of vacuum plasma cleaning machine:
With the development of modern electronics technology, Flip - ChipBond semiconductor packaging technology has been widely applied, but as a result of the front-end technology requirements, the machining process will inevitably some residual organic matter or other contaminants on the base material, in the baking process, originally under the pad of gold plating Ni element will be moved to the surface layer, without removal of pollutants, leads to bump on the semiconductor chip in Flip - ChipBond technology with the whole process of pad bonding effect is poor, adverse consequences.
Traditional cleaning processing technology such as CFC cleaning, ODS cleaning, due to environmental pollution, high cost, limited the further development of modern electronic equipment technology, especially precision mechanical equipment manufacturing semiconductor chips, so the plasma cleaning machine dry cleaning, especially plasma cleaning technology is the current development trend. There are two cleaning methods of vacuum plasma cleaning machine. One is the reaction of plasma on the material surface, common gases, such as argon (AR), nitrogen (N2), etc. The other is that the oxygen radical has undergone chemical changes. The common gases are hydrogen, oxygen, and so on. Vacuum plasma cleaning machine plasma through impact to destroy the ionic bond of organic matter, so as to remove surface pollutants. When the working pressure is low, the higher the ion energy, the greater the kinetic energy and the greater the impact force. If the physical reaction is used for cleaning, it reflects the lower working pressure and the stronger the actual cleaning effect.
Selecting argon gas as the advantages of vacuum plasma gas cleaning, cleaning principle of argon plasma technique is to use particle mechanical cleaning, argon gas is inert gas, in the process of cleaning will not cause chemical reaction products and gas, avoid secondary pollution, as the front-end processing residual residue can be reasonably clear, in the process of making a semiconductor can be fused in the bonding process. Compared with the traditional wet cleaning process, the plasma technology of vacuum plasma cleaning machine is environmentally friendly and cheap.
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