Introduction of new phase change memory and the application of plasma cleaning machine etching

• Categories:Company Dynamics
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2020-12-19
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(Summary description)Introduction of new phase change memory and the application of plasma cleaning machine etching: The development of phase change memory (PCM) has been relatively mature. Its principle is the obvious resistance difference between crystalline phase (low resistance) and amorphous phase (high resistance) of some PCM materials. The SET and RESET operations correspond to the low resistance and high resistance states of PCMS respectively, which means that the switch between "0" and "1" of PCMS does not require the erasure of flash memory. These two states can use the Joule thermal effect of an electric current to heat the PCM, thus rapidly switching and cycling. The initial state of PCMS is mostly crystalline phase (low resistance) due to the high temperature of the process in the back phase of logic. Conversion to an amorphous phase requires a very large current pulse passing through the Bottom Electrode Contact (BEC) in a very short time to melt part of the phase-change material and anneal. This part is converted into an amorphous phase by melting annealing, known as a Programmable region. The impedance between the top electrode and the bottom electrode is effectively increased by the phase-change materials in series with the crystalline phase region. The conversion to crystalline phase requires a medium current pulse to pass through the lower electrode contact heating program-controlled zone at a temperature between the critical temperature of crystallization and the critical temperature of melting for a long time. The state of the programmed region can be read by measuring the impedance of the storage unit. This reading requires that the current flowing through the storage unit be small enough to avoid affecting the current state of the device. The properties of PHASE change materials directly determine the performance of phase change memory. Currently, sulfur compounds (Chalcogenide), such as Ge2Sb2Te5(GST), have been widely studied. The crystallization time may be less than 100ns. The important applications of plasma cleaning machine etching in the graphics of phase change memory storage unit include: plasma cleaning machine etching of lower electrode contact hole and phase change material (GST) plasma cleaning machine etching.