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Study on graphene plasma etching of plasma cleaning machine manufacturers

  • Categories:Company Dynamics
  • Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
  • Origin:
  • Time of issue:2021-04-10
  • Views:

(Summary description)Since 2004, there have been numerous research reports on graphene, including hundreds of related reports in Science and Nature. Research on graphene dates back to the 1970s. Clar et al. used chemical methods to synthesize a series of compounds with large conjugated systems, namely graphene sheets. Since then, Schmidt and other scientists have improved their method and synthesized many graphene derivatives with different edge modification groups, but this method cannot produce large planar graphene structures. In 2004, Geim et al. took graphite as raw material and obtained a series of new materials "graphene" called two-dimensional atomic crystals through micromechanical stripping method. Graphene, also known as a "single-layer graphite sheet," refers to a dense layer of carbon atoms wrapped around a lattice of honeycomb crystals, arranged in a two-dimensional structure similar to the single-atom layer of graphite. Geim et al. made use of nanoscale gold "scaffolding" to create a monolayer graphene film suspended on it. They found that the suspended graphene film was not a "two-dimensional flat structure", but a "microwave-like monolayer structure", and attributed the stability of graphene monolayer structure to its "nanoscale micro-distortion". Graphene is a zero-band gap material where electrons and holes can exist continuously, even at room temperature. Carrier concentration can be as high as 10-13cm3, and mobility can exceed 2000cm2 /V·s. The theoretical specific surface area of graphene is as high as 2600m2/g, and it has outstanding thermal conductivity (3000W/m·K) and mechanical properties (1060GPa). In addition, its special structure, so that it has half integer quantum Hall effect, never disappear conductivity and so on. Graphene can be used as both a channel material and a backend interconnection due to its excellent two-dimensional transmission properties and high electrical conductivity. Of course, different use of etching process requirements are also different. However, graphene faces two problems in chip manufacturing applications: one is how to continuously grow high quality films in large areas; The second is how to pattern. The second aspect is closely related to the etching process. In contrast, there has been a lot of research on large areas of growth, but not a lot of work on patterning. This is because it is difficult to grow large areas of graphene on its own, and even fewer have the ability to develop both. In general, there are several plasma etching methods for graphene, such as oxygen, hydrogen and argon. This in addition to oxygen and hydrogen plasma etching more. They take advantage of graphene's high activity to react with it, typically splitting large areas of layered graphene along 60° or 120°.The above is the CRF plasma cleaning machine manufacturers on graphene plasma etching research some introduction.

Study on graphene plasma etching of plasma cleaning machine manufacturers

(Summary description)Since 2004, there have been numerous research reports on graphene, including hundreds of related reports in Science and Nature. Research on graphene dates back to the 1970s. Clar et al. used chemical methods to synthesize a series of compounds with large conjugated systems, namely graphene sheets. Since then, Schmidt and other scientists have improved their method and synthesized many graphene derivatives with different edge modification groups, but this method cannot produce large planar graphene structures. In 2004, Geim et al. took graphite as raw material and obtained a series of new materials "graphene" called two-dimensional atomic crystals through micromechanical stripping method. Graphene, also known as a "single-layer graphite sheet," refers to a dense layer of carbon atoms wrapped around a lattice of honeycomb crystals, arranged in a two-dimensional structure similar to the single-atom layer of graphite. Geim et al. made use of nanoscale gold "scaffolding" to create a monolayer graphene film suspended on it. They found that the suspended graphene film was not a "two-dimensional flat structure", but a "microwave-like monolayer structure", and attributed the stability of graphene monolayer structure to its "nanoscale micro-distortion".


Graphene is a zero-band gap material where electrons and holes can exist continuously, even at room temperature. Carrier concentration can be as high as 10-13cm3, and mobility can exceed 2000cm2 /V·s. The theoretical specific surface area of graphene is as high as 2600m2/g, and it has outstanding thermal conductivity (3000W/m·K) and mechanical properties (1060GPa). In addition, its special structure, so that it has half integer quantum Hall effect, never disappear conductivity and so on. Graphene can be used as both a channel material and a backend interconnection due to its excellent two-dimensional transmission properties and high electrical conductivity. Of course, different use of etching process requirements are also different. However, graphene faces two problems in chip manufacturing applications: one is how to continuously grow high quality films in large areas; The second is how to pattern. The second aspect is closely related to the etching process. In contrast, there has been a lot of research on large areas of growth, but not a lot of work on patterning. This is because it is difficult to grow large areas of graphene on its own, and even fewer have the ability to develop both.


In general, there are several plasma etching methods for graphene, such as oxygen, hydrogen and argon. This in addition to oxygen and hydrogen plasma etching more. They take advantage of graphene's high activity to react with it, typically splitting large areas of layered graphene along 60° or 120°.The above is the CRF plasma cleaning machine manufacturers on graphene plasma etching research some introduction.

  • Categories:Company Dynamics
  • Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
  • Origin:
  • Time of issue:2021-04-10 10:21
  • Views:
Information

Study on graphene plasma etching of plasma cleaning machine manufacturers:
Since 2004, there have been numerous research reports on graphene, including hundreds of related reports in Science and Nature. Research on graphene dates back to the 1970s. Clar et al. used chemical methods to synthesize a series of compounds with large conjugated systems, namely graphene sheets. Since then, Schmidt and other scientists have improved their method and synthesized many graphene derivatives with different edge modification groups, but this method cannot produce large planar graphene structures. In 2004, Geim et al. took graphite as raw material and obtained a series of new materials "graphene" called two-dimensional atomic crystals through micromechanical stripping method. Graphene, also known as a "single-layer graphite sheet," refers to a dense layer of carbon atoms wrapped around a lattice of honeycomb crystals, arranged in a two-dimensional structure similar to the single-atom layer of graphite. Geim et al. made use of nanoscale gold "scaffolding" to create a monolayer graphene film suspended on it. They found that the suspended graphene film was not a "two-dimensional flat structure", but a "microwave-like monolayer structure", and attributed the stability of graphene monolayer structure to its "nanoscale micro-distortion".

CRF plasma etching
Graphene is a zero-band gap material where electrons and holes can exist continuously, even at room temperature. Carrier concentration can be as high as 10-13cm3, and mobility can exceed 2000cm2 /V·s. The theoretical specific surface area of graphene is as high as 2600m2/g, and it has outstanding thermal conductivity (3000W/m·K) and mechanical properties (1060GPa). In addition, its special structure, so that it has half integer quantum Hall effect, never disappear conductivity and so on. Graphene can be used as both a channel material and a backend interconnection due to its excellent two-dimensional transmission properties and high electrical conductivity. Of course, different use of etching process requirements are also different. However, graphene faces two problems in chip manufacturing applications: one is how to continuously grow high quality films in large areas; The second is how to pattern. The second aspect is closely related to the etching process. In contrast, there has been a lot of research on large areas of growth, but not a lot of work on patterning. This is because it is difficult to grow large areas of graphene on its own, and even fewer have the ability to develop both.


In general, there are several plasma etching methods for graphene, such as oxygen, hydrogen and argon. This in addition to oxygen and hydrogen plasma etching more. They take advantage of graphene's high activity to react with it, typically splitting large areas of layered graphene along 60° or 120°.The above is the CRF plasma cleaning machine manufacturers on graphene plasma etching research some introduction.

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