Plasma cleaning machine several frequency differences and applications

• Categories:Technical Support
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2020-08-31
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(Summary description)There are three commonly used plasma excitation frequencies. The plasma with excitation frequency of 40kHz is ultrasonic plasma, the plasma with 13.56MHz is rf plasma, and the plasma with 2.45GHz is microwave plasma. The self-bias voltage of the ultrasonic plasma is about 1000V, and that of the rf plasma is about 250V. The self-bias voltage of the microwave plasma is very low, only a few tens of volts. Moreover, the mechanisms of the three plasmas are different. The reaction in ultrasonic plasma is physical reaction, the reaction in rf plasma is both physical reaction and chemical reaction, while the reaction in microwave plasma is chemical reaction. Ultrasonic plasma cleaning has a great influence on the surface to be cleaned, so rf plasma cleaning and microwave plasma cleaning are mostly used in semiconductor manufacturing applications. Ultrasonic plasma is used in surface degluing, burring and polishing, etc. The typical plasma physical cleaning process is plasma cleaning with argon added in the reaction chamber as the auxiliary treatment. Argon itself is an inert gas. The plasma does not react with the surface, but it is cleaned by ion bombardment. The typical plasma chemical cleaning process is oxygen plasma cleaning. Oxygen radicals produced by plasma are very reactive and easily react with hydrocarbons, producing volatile substances such as carbon dioxide, carbon monoxide and water, thus removing pollutants from the surface. Plasma cleaning is given priority to with physical reaction, also known as sputtering etching (SPE) or ion milling (IM), its advantage lies in itself does not produce chemical reaction, will not leave any clean surface oxide, can keep the cleaning chemical pure sex, there is a kind of surface reaction mechanism of plasma cleaning is plays a significant role in physical and chemical reaction, the reactive ion etching or reactive ion beam etching, two kinds of cleaning can promote each other, by ion bombardment cleaning surface damage weaken its chemical bonds or atomic state formation, easy absorption of reactant, ion collision that is cleaning heat, making them more likely to respond; Selecting 40KHZ ultrasonic plasma and adding appropriate reaction gas can effectively remove gum residue, metal burrs and so on. Microwave plasma of 2.45ghz is often used in scientific research and laboratory.