Plasma cleaning machine specific applications of specific properties

• Categories:Industry News
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2020-08-31
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(Summary description)Plasma cleaning machine/etching machine produce plasma device is set in an airtight container, two electrode form electric field with a vacuum pump to achieve a certain degree of vacuum, with gas more and more thin, the distance between molecules and the free movement of distance between molecules or ions is also becoming more and more long, the electric field, they collide and form plasma, the activity of these ions is very high, the energy enough to destroy almost all of the chemical bonds in any exposed surface caused by chemical reaction, the plasma of different gases with different chemical properties, such as oxygen plasma has the very high oxidation resistance, can resist oxidation reactions generated gas, So as to achieve the cleaning effect; Corrosive gas plasma has good anisotropy, which can meet the needs of etching. Glow is emitted by plasma treatment, so it is called glow discharge treatment. The mechanism of plasma cleaning machine mainly relies on the "activation action" of the active particles in plasma to remove the object surface stains. From the point of view of the reaction mechanism, the plasma cleaning machine usually includes the following processes: inorganic gas is excited to plasma state; The gaseous substance is adsorbed on the solid surface; The adsorbed group reacts with the solid surface molecule to form the product molecule. The molecules of the products were analyzed to form the gas phase. The residue of the reaction escapes from the surface. Plasma cleaning technology is characterized by both process base material type of object, can be processing, metal, semiconductor, oxides and most of the polymer materials, such as polypropylene, polyester, polyimide, poly (ethyl chloride, epoxy, and even can well with teflon etc, and can realize the overall and partial cleaning and complex structure.