Welcome to Shenzhen Sing Fung Intelligent  Manufacturing Co., Ltd.

E-mail:shaobo@sfi-crf.com

img
搜索
确认
取消
News Center

News Center

Professional plasma plasma high-tech enterprise dedicated to providing manufacturing equipment and process solutions for the electronics industry
News

The RF plasma generator has the effect of concentrating the plasma on the double-substrate stage structure

  • Categories:Company Dynamics
  • Author:Plasma cleaning machine-CRF plasma plasma equipment-plasma surface treatment machine manufacturer-chengfeng intelligent manufacturing
  • Origin:
  • Time of issue:2022-03-16
  • Views:

(Summary description)The RF plasma generator has the effect of concentrating the plasma on the double-substrate stage structure: Diamond has physical and chemical properties such as high hardness, thermal conductivity, chemical stability, and optical transmittance. These excellent properties make diamond an ideal material in many fields. For example, it can be used as an electron beam extraction window, a high-frequency high-power electronic device, a highly sensitive surface acoustic wave filter, a cutting tool, and the like. At the beginning of the preparation of diamond by the plasma chemical vapor deposition (MPCVD) method of the radio frequency plasma generator, the advantages of the MPCVD method for preparing the diamond became very obvious. The high-end diamonds in the world are basically prepared by the MPCVD method. In contrast, the MPCVD method has become an ideal method for growing diamond due to its advantages of non-polar discharge, fast growth rate, and less diamond impurities. In recent years, MPCVD technology has made great progress, and the research on the influence of diamond deposition process parameters has become mature, but the research on the resonant cavity of MPCVD device needs to be further studied. The microwave resonator is the core component of the MPCVD device. Different structures of the microwave resonator of the RF plasma generator will affect the intensity and distribution of the electric field, thereby affecting the plasma state, and correspondingly affecting the quality and rate of diamond deposition. The structural study of the microwave resonator of MPCVD device is valuable for diamond growth. Commonly used MPCVD method for diamond growth resonators are stainless steel resonator type and quartz bell type, quartz bell type is conducive to the growth of large-area diamond film, but the rate is slow and easy to contaminate the quartz tube, while the stainless steel resonator type equipment has the ability to grow. Features of fast speed. The use of cylindrical resonant cavity MPCVD equipment can increase the plasma density by increasing the deposition pressure, and realize the rapid growth of diamond films on the substrate table. The purpose of enhancing the power density is achieved by changing the position of the quartz tube, the structure of the cavity, and the flexibility of the tuning board. The quartz tube is arranged under the deposition table, and the moving range of the tuning plate and the tuning piston in the resonant cavity is increased to achieve the purpose of reducing plasma pollution and increasing the deposition rate. The relative spectral line intensity of the groups in the plasma of the RF plasma generator can reflect the degree of dissociation of the gas, and is also an important factor for the deposition rate and quality of diamond. The upper substrate stage is used as the tip in the microwave electromagnetic field. The ions move violently and continuously collide with other particles, increasing the density of the plasma. The high H spectral line intensity indicates that the plasma can generate a higher concentration of H radicals under the dual-substrate structure, and the H radicals can etch non-diamond phases such as sp'C and graphite, and improve the quality of the deposited diamond. Compared with the dual-substrate structure, the group strengths at each position under the single-substrate stage are very close, indicating that the dual-substrate stage structure has the effect of agglomerating plasma, which can make each group move closer to the range of the substrate stage. The uniformity is good in the range of the wafer stage, while the uniformity outside the range of the substrate stage is poor, and the agglomeration effect of a single substrate stage on the plasma is weaker, and the plasma is more divergent. In addition, under the double-substrate structure, with the increase of methane concentration, the intensity of C2 groups increases more significantly, which can effectively improve the deposition rate of diamond; under the double-substrate structure, the plasma electron temperature of the RF plasma generator is lower, and the internal particles The collisions are more violent, and the electron temperature decreases as the pressure rises.

The RF plasma generator has the effect of concentrating the plasma on the double-substrate stage structure

(Summary description)The RF plasma generator has the effect of concentrating the plasma on the double-substrate stage structure:
Diamond has physical and chemical properties such as high hardness, thermal conductivity, chemical stability, and optical transmittance. These excellent properties make diamond an ideal material in many fields. For example, it can be used as an electron beam extraction window, a high-frequency high-power electronic device, a highly sensitive surface acoustic wave filter, a cutting tool, and the like.
At the beginning of the preparation of diamond by the plasma chemical vapor deposition (MPCVD) method of the radio frequency plasma generator, the advantages of the MPCVD method for preparing the diamond became very obvious. The high-end diamonds in the world are basically prepared by the MPCVD method. In contrast, the MPCVD method has become an ideal method for growing diamond due to its advantages of non-polar discharge, fast growth rate, and less diamond impurities.
In recent years, MPCVD technology has made great progress, and the research on the influence of diamond deposition process parameters has become mature, but the research on the resonant cavity of MPCVD device needs to be further studied. The microwave resonator is the core component of the MPCVD device. Different structures of the microwave resonator of the RF plasma generator will affect the intensity and distribution of the electric field, thereby affecting the plasma state, and correspondingly affecting the quality and rate of diamond deposition. The structural study of the microwave resonator of MPCVD device is valuable for diamond growth.
Commonly used MPCVD method for diamond growth resonators are stainless steel resonator type and quartz bell type, quartz bell type is conducive to the growth of large-area diamond film, but the rate is slow and easy to contaminate the quartz tube, while the stainless steel resonator type equipment has the ability to grow. Features of fast speed.
The use of cylindrical resonant cavity MPCVD equipment can increase the plasma density by increasing the deposition pressure, and realize the rapid growth of diamond films on the substrate table. The purpose of enhancing the power density is achieved by changing the position of the quartz tube, the structure of the cavity, and the flexibility of the tuning board. The quartz tube is arranged under the deposition table, and the moving range of the tuning plate and the tuning piston in the resonant cavity is increased to achieve the purpose of reducing plasma pollution and increasing the deposition rate.
The relative spectral line intensity of the groups in the plasma of the RF plasma generator can reflect the degree of dissociation of the gas, and is also an important factor for the deposition rate and quality of diamond. The upper substrate stage is used as the tip in the microwave electromagnetic field. The ions move violently and continuously collide with other particles, increasing the density of the plasma. The high H spectral line intensity indicates that the plasma can generate a higher concentration of H radicals under the dual-substrate structure, and the H radicals can etch non-diamond phases such as sp'C and graphite, and improve the quality of the deposited diamond.
Compared with the dual-substrate structure, the group strengths at each position under the single-substrate stage are very close, indicating that the dual-substrate stage structure has the effect of agglomerating plasma, which can make each group move closer to the range of the substrate stage. The uniformity is good in the range of the wafer stage, while the uniformity outside the range of the substrate stage is poor, and the agglomeration effect of a single substrate stage on the plasma is weaker, and the plasma is more divergent.
In addition, under the double-substrate structure, with the increase of methane concentration, the intensity of C2 groups increases more significantly, which can effectively improve the deposition rate of diamond; under the double-substrate structure, the plasma electron temperature of the RF plasma generator is lower, and the internal particles The collisions are more violent, and the electron temperature decreases as the pressure rises.

  • Categories:Company Dynamics
  • Author:Plasma cleaning machine-CRF plasma plasma equipment-plasma surface treatment machine manufacturer-chengfeng intelligent manufacturing
  • Origin:
  • Time of issue:2022-03-16 20:39
  • Views:
Information

The RF plasma generator has the effect of concentrating the plasma on the double-substrate stage structure:
Diamond has physical and chemical properties such as high hardness, thermal conductivity, chemical stability, and optical transmittance. These excellent properties make diamond an ideal material in many fields. For example, it can be used as an electron beam extraction window, a high-frequency high-power electronic device, a highly sensitive surface acoustic wave filter, a cutting tool, and the like.

At the beginning of the preparation of diamond by the plasma chemical vapor deposition (MPCVD) method of the radio frequency plasma generator, the advantages of the MPCVD method for preparing the diamond became very obvious. The high-end diamonds in the world are basically prepared by the MPCVD method. In contrast, the MPCVD method has become an ideal method for growing diamond due to its advantages of non-polar discharge, fast growth rate, and less diamond impurities.
In recent years, MPCVD technology has made great progress, and the research on the influence of diamond deposition process parameters has become mature, but the research on the resonant cavity of MPCVD device needs to be further studied. The microwave resonator is the core component of the MPCVD device. Different structures of the microwave resonator of the RF plasma generator will affect the intensity and distribution of the electric field, thereby affecting the plasma state, and correspondingly affecting the quality and rate of diamond deposition. The structural study of the microwave resonator of MPCVD device is valuable for diamond growth.
Commonly used MPCVD method for diamond growth resonators are stainless steel resonator type and quartz bell type, quartz bell type is conducive to the growth of large-area diamond film, but the rate is slow and easy to contaminate the quartz tube, while the stainless steel resonator type equipment has the ability to grow. Features of fast speed.
The use of cylindrical resonant cavity MPCVD equipment can increase the plasma density by increasing the deposition pressure, and realize the rapid growth of diamond films on the substrate table. The purpose of enhancing the power density is achieved by changing the position of the quartz tube, the structure of the cavity, and the flexibility of the tuning board. The quartz tube is arranged under the deposition table, and the moving range of the tuning plate and the tuning piston in the resonant cavity is increased to achieve the purpose of reducing plasma pollution and increasing the deposition rate.
The relative spectral line intensity of the groups in the plasma of the RF plasma generator can reflect the degree of dissociation of the gas, and is also an important factor for the deposition rate and quality of diamond. The upper substrate stage is used as the tip in the microwave electromagnetic field. The ions move violently and continuously collide with other particles, increasing the density of the plasma. The high H spectral line intensity indicates that the plasma can generate a higher concentration of H radicals under the dual-substrate structure, and the H radicals can etch non-diamond phases such as sp'C and graphite, and improve the quality of the deposited diamond.
Compared with the dual-substrate structure, the group strengths at each position under the single-substrate stage are very close, indicating that the dual-substrate stage structure has the effect of agglomerating plasma, which can make each group move closer to the range of the substrate stage. The uniformity is good in the range of the wafer stage, while the uniformity outside the range of the substrate stage is poor, and the agglomeration effect of a single substrate stage on the plasma is weaker, and the plasma is more divergent.
In addition, under the double-substrate structure, with the increase of methane concentration, the intensity of C2 groups increases more significantly, which can effectively improve the deposition rate of diamond; under the double-substrate structure, the plasma electron temperature of the RF plasma generator is lower, and the internal particles The collisions are more violent, and the electron temperature decreases as the pressure rises.

Scan the QR code to read on your phone

Relevant Information

Shenzhen Sing Fung Intelligent  Manufacturing Co., Ltd.

Adhere to quality as the foundation, honesty as the way of business, innovation as the source of development, and service as the pinnacle of value

©Shenzhen Sing Fung Intelligent Manufacturing Co., Ltd. All rights reserved
粤ICP备19006998号
dh

TEL:0755-3367 3020 / 0755-3367 3019

dh

E-mail:sales-sfi@sfi-crf.com

dh

ADD:Mabao Industrial Zone, Huangpu, Baoan District, Shenzhen