Plasma cleaner machine in microelectronic package of application

• Categories:Technical Support
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2020-08-15
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(Summary description)In the production process of microelectronic packaging, a variety of fingerprints, flux, cross contamination, natural oxidation, devices and materials will form a variety of surface contamination, including organic matter, epoxy resin, photoresist and solder, metal salts, etc. These stains can have a significant impact on the packaging production process and quality. The use of plasma cleaning machine can be easily removed through the formation of contaminated molecular production process, to ensure the atoms and atoms between the close contact surface adhesion of the workpiece, so as to effectively improve the bonding strength, improve the quality of wafer bonding, reduce the leakage rate, improve packaging performance, output and component reliability. The choice of plasma cleaning process in microelectronic packaging depends on the requirements of subsequent processes on the material surface, the chemical composition of the original characteristics of the material surface and the properties of the pollutants. Plasma cleaning gases are commonly used for argon, oxygen, hydrogen, carbon tetrafluoride and their mixed gases. Small silver adhesive substrate: contaminants can cause colloidal silver to be spherical, which is not conducive to chip adhesion and easy to chip damage. The use of rf plasma cleaning can greatly improve surface roughness and hydrophilicity, which is conducive to silver colloidal and ceramic tile chip adhesion. At the same time, the usage can save silver adhesive and reduce cost. Lead bonding: Before the chip joins the substrate and after curing at high temperature, existing pollutants may contain microparticles and oxides. Physical and chemical reactions of these pollutants lead and welding between the chip and the substrate are incomplete with poor bond strength and poor adhesion. Rf plasma cleaning can significantly improve the surface activity, bonding strength and tensile strength of the bonding wire before wire bonding. The pressure on the joint can be low (when there are contaminants, the head penetrates the contaminants, the need for greater pressure), and in some cases the bonding temperature can also be lowered, thereby increasing production and reducing costs. Sealant: In the epoxy resin process, pollutants will lead to high foaming rate of foam, resulting in low product quality and service life, so in order to avoid the formation of sealing foam also pay attention to. After rf plasma cleaning, the bonding of the chip and substrate will be closer to the colloid, which will greatly reduce the foam formation, and also significantly improve the heat dissipation rate and light emissivity.