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What is the process of the oxygen plasma surface treatment instrument to treat silicon dioxide film materials
- Categories:Industry News
- Author:Plasma cleaning machine-CRF plasma plasma equipment-plasma surface treatment machine manufacturer-chengfeng intelligent manufacturing
- Origin:
- Time of issue:2021-07-24
- Views:
(Summary description)What is the process of the oxygen plasma surface treatment instrument to treat silicon dioxide film materials: The oxygen plasma surface treatment instrument plasma process is used to assist in the treatment of materials, in which the chemical reaction between the gas phase and the solid phase surface plays a key role. When etching silicon dioxide films, the oxygen plasma surface treatment instrument can also work, the working process of a typical reactor in plasma surface treatment equipment. The input gas is a mixture of carbon tetrafluoride and oxygen, and the plasma is excited by radio frequency or electric field. Various ions such as CF3+, CF2+, O2+, O- and F- are generated during the electron impact ionization process; free radicals such as CF3, CF2, O, and F are generated during the electron impact decomposition process. The oxygen plasma surface treatment instrument can generate CO, CO2, SiF2, SiF4 and other molecules through the chemical reaction between the gas phase and the silicon dioxide surface. The concentration and energy distribution of the particles have a greater impact on the etching rate, anisotropy index and selectivity of the plasma cleaner. The particle concentration of these oxygen plasma surface treatment instruments is determined by some common physical and chemical processes. This includes the generation of electron-ion pairs; the generation of free radicals; the generation of negative ions; gas phase chemical reactions; the migration of ions on the surface; the migration of free radicals on the surface; and the surface phase reactions. This is a complete reaction process of the oxygen plasma surface treatment instrument, and the formula is as follows. E+AB →AB+ +2e E+AB →e+A+B E+AB→A- +B E+A+B→C+D Fi=-Da▽ni FA=-Da▽nA A(g)+B(s) →C(g)
What is the process of the oxygen plasma surface treatment instrument to treat silicon dioxide film materials
(Summary description)What is the process of the oxygen plasma surface treatment instrument to treat silicon dioxide film materials:
The oxygen plasma surface treatment instrument plasma process is used to assist in the treatment of materials, in which the chemical reaction between the gas phase and the solid phase surface plays a key role. When etching silicon dioxide films, the oxygen plasma surface treatment instrument can also work, the working process of a typical reactor in plasma surface treatment equipment. The input gas is a mixture of carbon tetrafluoride and oxygen, and the plasma is excited by radio frequency or electric field.
Various ions such as CF3+, CF2+, O2+, O- and F- are generated during the electron impact ionization process; free radicals such as CF3, CF2, O, and F are generated during the electron impact decomposition process. The oxygen plasma surface treatment instrument can generate CO, CO2, SiF2, SiF4 and other molecules through the chemical reaction between the gas phase and the silicon dioxide surface. The concentration and energy distribution of the particles have a greater impact on the etching rate, anisotropy index and selectivity of the plasma cleaner.
The particle concentration of these oxygen plasma surface treatment instruments is determined by some common physical and chemical processes. This includes the generation of electron-ion pairs; the generation of free radicals; the generation of negative ions; gas phase chemical reactions; the migration of ions on the surface; the migration of free radicals on the surface; and the surface phase reactions. This is a complete reaction process of the oxygen plasma surface treatment instrument, and the formula is as follows.
E+AB →AB+ +2e
E+AB →e+A+B
E+AB→A- +B
E+A+B→C+D
Fi=-Da▽ni
FA=-Da▽nA
A(g)+B(s) →C(g)
- Categories:Industry News
- Author:Plasma cleaning machine-CRF plasma plasma equipment-plasma surface treatment machine manufacturer-chengfeng intelligent manufacturing
- Origin:
- Time of issue:2021-07-24 08:20
- Views:
Information
What is the process of the oxygen plasma surface treatment instrument to treat silicon dioxide film materials:
The oxygen plasma surface treatment instrument plasma process is used to assist in the treatment of materials, in which the chemical reaction between the gas phase and the solid phase surface plays a key role. When etching silicon dioxide films, the oxygen plasma surface treatment instrument can also work, the working process of a typical reactor in plasma surface treatment equipment. The input gas is a mixture of carbon tetrafluoride and oxygen, and the plasma is excited by radio frequency or electric field.
Various ions such as CF3+, CF2+, O2+, O- and F- are generated during the electron impact ionization process; free radicals such as CF3, CF2, O, and F are generated during the electron impact decomposition process. The oxygen plasma surface treatment instrument can generate CO, CO2, SiF2, SiF4 and other molecules through the chemical reaction between the gas phase and the silicon dioxide surface. The concentration and energy distribution of the particles have a greater impact on the etching rate, anisotropy index and selectivity of the plasma cleaner.
The particle concentration of these oxygen plasma surface treatment instruments is determined by some common physical and chemical processes. This includes the generation of electron-ion pairs; the generation of free radicals; the generation of negative ions; gas phase chemical reactions; the migration of ions on the surface; the migration of free radicals on the surface; and the surface phase reactions. This is a complete reaction process of the oxygen plasma surface treatment instrument, and the formula is as follows.
E+AB →AB+ +2e
E+AB →e+A+B
E+AB→A- +B
E+A+B→C+D
Fi=-Da▽ni
FA=-Da▽nA
A(g)+B(s) →C(g)
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