Spectroscopic study of silicon dioxide film deposited by plasma treatment TEOS process

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• Time of issue:2021-06-07
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(Summary description)Spectroscopic study of silicon dioxide film deposited by plasma plasma treatment TEOS process:         Silicon dioxide film is a kind of dielectric material with excellent performance. It has the advantages of stable dielectric performance, low dielectric loss, good moisture resistance, and good temperature coefficient. It has extremely stable chemical properties and electrical insulation. Therefore, silicon dioxide is widely used in integrated circuit technology. plasma plasma treatment         It is precisely because of the wide application of silicon dioxide films in integrated circuit technology that it is necessary to prepare silicon dioxide films with different characteristics, which means that various new film deposition technologies must be continuously developed. In recent years, the application of atmospheric plasma plasma processing technology in thin film deposition has attracted more and more attention. Compared with traditional deposition methods, it has no vacuum chamber constraints, convenient and flexible operation, and low operating costs. At the same time, it has a very low reaction temperature and will not cause thermal damage to the substrate.         Different processing purposes have different requirements for plasma plasma processing characteristics. In plasma chemical vapor deposition film processing, a high concentration of highly reactive free radical particles is required. This requires the plasma to have a sufficiently high electron and ion concentration, and a suitable electron temperature. At the same time, in order to obtain a uniformly deposited film with a larger area, the plasma is required to have sufficient spatial uniformity.         Spectroscopy is more and more widely used as a diagnostic method of plasma. Its advantages are not only that it will not affect the state of the plasma itself, but it also has selectivity to the composition, and it can also obtain time and space-resolved information. Spectral analysis is the spectrum obtained by using the light radiation of a substance. This analysis method can be used for substances that can emit light under the excitation of external energy. The number, intensity, shape, and width of the spectral lines emitted by the elements are closely related to the physical state and physical parameters of the substance, such as temperature, pressure, and particle density. Therefore, this test technique provides us with an effective method to analyze the plasma composition, content, temperature and microscopic motion mechanism.         Under normal circumstances, the PECVD technology that uses TEOS as the deposition source to deposit silicon dioxide films, it is generally believed that TBOS will undergo the following decomposition reaction: Si(OC2H)4(@)-SiO2(目 + 4C2H(2) + 2H2Og. TEOS in It is decomposed in the plasma to produce solid silicon dioxide and deposited on the substrate, while other decomposition products are gaseous and exhausted with the reaction exhaust gas.         The characteristic peaks of Si and C-H detected in the spectrum indicate that TEOS has indeed undergone a decomposition reaction in the plasma, producing silicon compounds and some hydrocarbons. This also reflects from the perspective of spectroscopy that silicon dioxide is the product of TEOS decomposed by plasma.         We found that the growth rate of silicon dioxide does increase with the increase of input power. They have excellent similarity, so in actual production, we can judge the change of the film growth rate by the intensity change of the characteristic peaks of Si and CH in the spectrum, and thus change the process parameters when depositing the film, so as to get us The required film deposition rate improves the quality of film formation.