The potential application of germanium in integrated circuits by plasma etching manufacturers and its etching methods (middle)

• Categories:Company Dynamics
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2021-03-31
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(Summary description)As a new generation of semiconductor material, germanium has a great possibility to be used in IC manufacturing industry. And in the semiconductor industry planning also germanium as the future integrated circuit PMOS tube material. The use of germanium in the fabrication of integrated circuits, where large areas of germanium or germanium alloy films are defect-free, is a major obstacle in the way of industry. For germanium etching, there are two common etching methods. One is chlor-based etching, which is easier to achieve and does not introduce changes in electrical properties. The disadvantage is that it is difficult to control the overall shape. In general, germanium etching has a high aspect ratio, or multi-layer structure, in the etching to maintain good graphics transfer needs to use a lot of means. Chlorine (400 w, 200 SCCM, ER ~ 200 a/s) of the boundary of the etching will not damage the interface (lateral boundary lattice intact), it is of vital importance in high-performance device, may leave out the subsequent repair injury of lattice technology, reduce costs, to etch itself also reduces the difficulty, but we can also see, the wall graphic control is not good enough to get the graphics around 75 ° Angle, it is difficult to meet the actual needs. For the control of the profile shape of the side wall, the general practice is to add polymer etching gas and control the overall shape by multi-step etching. Argon gas and chlorine gas are mainly used to control the shape of the graph by adding polymer etching gas or changing bias pressure, and the graph of different side wall morphology is obtained respectively. CH3F and chlorine are very effective at controlling the form. The regulation of bias voltage and flow rate plays an important role in controlling the bottom shape. By these means, the form control of germanium and the adjustment of key dimensions can be accomplished.