Welcome to Shenzhen Sing Fung Intelligent  Manufacturing Co., Ltd.

E-mail:shaobo@sfi-crf.com

img
搜索
确认
取消
News Center

News Center

Professional plasma plasma high-tech enterprise dedicated to providing manufacturing equipment and process solutions for the electronics industry
News

Plasma dry etching machine manufacturers gallium arsenic etching

  • Categories:Industry News
  • Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
  • Origin:
  • Time of issue:2021-03-29
  • Views:

(Summary description)In addition to indium gallium arsenic, gallium arsenic is also widely expected as a semiconductor material, and the two are often used together to build high performance devices. Therefore, it is necessary for us to explore and prospect the etching technology of this kind of semiconductor. The deep hole etching of GaAs semiconductor material was carried out by using Cl2 and BCl3 mixed gases. The etching rate was 6~8um/min, the photoresistor was used as the mask material, and the selection ratio was 8∶1. Although the author claims that there is no problem with the smooth morphology of the hole as an interconnection, it is obvious that the Angle of 70℃ ~ 80℃ is difficult to win. For any process below 14nm, more new technologies and detailed studies are needed to better complete the graphic definition. In addition to being used as semiconductor material itself, gallium arsenic can be used with indium phosphide and indium gallium arsenic, gallium arsenic semiconductor can also be used with aluminum-gallium arsenic, aluminum-gallium arsenic phosphorus. This type of etching also generally has a large aspect ratio. This kind of etching generally adopts high temperature laser etching, so the graphic definition is accurate, but the roughness is large, especially sensitive to the etching gas composition and temperature. Taking into account the actual situation, the post processing process of etching is added to improve the surface roughness. The roughness of the etched line edge needs to be improved, but the straight Angle of nearly 90° has great advantages, especially when the aspect ratio reaches more than 20, it can still transmit the image accurately.The above is the introduction of the plasma dry etching machine manufacturers to the etching of gallium and arsenic, I hope to help you.

Plasma dry etching machine manufacturers gallium arsenic etching

(Summary description)In addition to indium gallium arsenic, gallium arsenic is also widely expected as a semiconductor material, and the two are often used together to build high performance devices. Therefore, it is necessary for us to explore and prospect the etching technology of this kind of semiconductor. The deep hole etching of GaAs semiconductor material was carried out by using Cl2 and BCl3 mixed gases. The etching rate was 6~8um/min, the photoresistor was used as the mask material, and the selection ratio was 8∶1. Although the author claims that there is no problem with the smooth morphology of the hole as an interconnection, it is obvious that the Angle of 70℃ ~ 80℃ is difficult to win.


For any process below 14nm, more new technologies and detailed studies are needed to better complete the graphic definition.
In addition to being used as semiconductor material itself, gallium arsenic can be used with indium phosphide and indium gallium arsenic, gallium arsenic semiconductor can also be used with aluminum-gallium arsenic, aluminum-gallium arsenic phosphorus. This type of etching also generally has a large aspect ratio. This kind of etching generally adopts high temperature laser etching, so the graphic definition is accurate, but the roughness is large, especially sensitive to the etching gas composition and temperature. Taking into account the actual situation, the post processing process of etching is added to improve the surface roughness.


The roughness of the etched line edge needs to be improved, but the straight Angle of nearly 90° has great advantages, especially when the aspect ratio reaches more than 20, it can still transmit the image accurately.The above is the introduction of the plasma dry etching machine manufacturers to the etching of gallium and arsenic, I hope to help you.

  • Categories:Industry News
  • Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
  • Origin:
  • Time of issue:2021-03-29 11:02
  • Views:
Information

Plasma dry etching machine manufacturers gallium arsenic etching:
In addition to indium gallium arsenic, gallium arsenic is also widely expected as a semiconductor material, and the two are often used together to build high performance devices. Therefore, it is necessary for us to explore and prospect the etching technology of this kind of semiconductor. The deep hole etching of GaAs semiconductor material was carried out by using Cl2 and BCl3 mixed gases. The etching rate was 6~8um/min, the photoresistor was used as the mask material, and the selection ratio was 8∶1. Although the author claims that there is no problem with the smooth morphology of the hole as an interconnection, it is obvious that the Angle of 70℃ ~ 80℃ is difficult to win.

CRF plasma dry etching machine
For any process below 14nm, more new technologies and detailed studies are needed to better complete the graphic definition.
In addition to being used as semiconductor material itself, gallium arsenic can be used with indium phosphide and indium gallium arsenic, gallium arsenic semiconductor can also be used with aluminum-gallium arsenic, aluminum-gallium arsenic phosphorus. This type of etching also generally has a large aspect ratio. This kind of etching generally adopts high temperature laser etching, so the graphic definition is accurate, but the roughness is large, especially sensitive to the etching gas composition and temperature. Taking into account the actual situation, the post processing process of etching is added to improve the surface roughness.


The roughness of the etched line edge needs to be improved, but the straight Angle of nearly 90° has great advantages, especially when the aspect ratio reaches more than 20, it can still transmit the image accurately.The above is the introduction of the plasma dry etching machine manufacturers to the etching of gallium and arsenic, I hope to help you.

Scan the QR code to read on your phone

Relevant Information

Shenzhen Sing Fung Intelligent  Manufacturing Co., Ltd.

Adhere to quality as the foundation, honesty as the way of business, innovation as the source of development, and service as the pinnacle of value

©Shenzhen Sing Fung Intelligent Manufacturing Co., Ltd. All rights reserved
粤ICP备19006998号
dh

TEL:0755-3367 3020 / 0755-3367 3019

dh

E-mail:sales-sfi@sfi-crf.com

dh

ADD:Mabao Industrial Zone, Huangpu, Baoan District, Shenzhen