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Application of low-temperature plasma technology treatment process design in packaging process

  • Categories:Technical Support
  • Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
  • Origin:
  • Time of issue:2021-03-04
  • Views:

(Summary description)With the development of SIP, BGA, CSP and other packaging technologies, semiconductor devices are developing towards the direction of modularization, high integration and miniaturization. The main problems of this kind of packaging and assembly process are: organic pollution at the filler bonding area, the formation of oxide film during electric heating, etc. Contaminants exist on the bonding surface, which decrease the bonding strength and potting strength of resin after encapsulation, and directly affect the assembly level and sustainable development of components. In order to improve and improve the assembly capacity of these components, everyone is trying to solve this problem. The improvement practice shows that the application of low-temperature plasma technology in the packaging process can greatly improve the reliability of packaging and the yield of finished products. The bare wafer IC is installed on the glass substrate (LCD) by COG process. After the wafer is bonded and hardened at high temperature, the substrate component precipitates on the surface of the bonding filler during the treatment by plasma technology at low temperature. At the same time, there is often a binder on the binder filler such as Ag slurry overflow component pollution. Using low-temperature plasma technology to remove these contaminants prior to the thermo-pressure interlocking process, the quality of the thermo-pressure interlocking can be greatly improved. In addition, due to the improved wettability of both the substrate and bare wafer surfaces, the LCD-COG module also has improved bond tiGHTNESS, as well as the problem of wire corrosion.

Application of low-temperature plasma technology treatment process design in packaging process

(Summary description)With the development of SIP, BGA, CSP and other packaging technologies, semiconductor devices are developing towards the direction of modularization, high integration and miniaturization. The main problems of this kind of packaging and assembly process are: organic pollution at the filler bonding area, the formation of oxide film during electric heating, etc. Contaminants exist on the bonding surface, which decrease the bonding strength and potting strength of resin after encapsulation, and directly affect the assembly level and sustainable development of components. In order to improve and improve the assembly capacity of these components, everyone is trying to solve this problem. The improvement practice shows that the application of low-temperature plasma technology in the packaging process can greatly improve the reliability of packaging and the yield of finished products.


The bare wafer IC is installed on the glass substrate (LCD) by COG process. After the wafer is bonded and hardened at high temperature, the substrate component precipitates on the surface of the bonding filler during the treatment by plasma technology at low temperature. At the same time, there is often a binder on the binder filler such as Ag slurry overflow component pollution. Using low-temperature plasma technology to remove these contaminants prior to the thermo-pressure interlocking process, the quality of the thermo-pressure interlocking can be greatly improved. In addition, due to the improved wettability of both the substrate and bare wafer surfaces, the LCD-COG module also has improved bond tiGHTNESS, as well as the problem of wire corrosion.

  • Categories:Technical Support
  • Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
  • Origin:
  • Time of issue:2021-03-04 10:32
  • Views:
Information

Application of low-temperature plasma technology treatment process design in packaging process:
With the development of SIP, BGA, CSP and other packaging technologies, semiconductor devices are developing towards the direction of modularization, high integration and miniaturization. The main problems of this kind of packaging and assembly process are: organic pollution at the filler bonding area, the formation of oxide film during electric heating, etc. Contaminants exist on the bonding surface, which decrease the bonding strength and potting strength of resin after encapsulation, and directly affect the assembly level and sustainable development of components. In order to improve and improve the assembly capacity of these components, everyone is trying to solve this problem. The improvement practice shows that the application of low-temperature plasma technology in the packaging process can greatly improve the reliability of packaging and the yield of finished products.

CRF low-temperature plasma technology treatment
The bare wafer IC is installed on the glass substrate (LCD) by COG process. After the wafer is bonded and hardened at high temperature, the substrate component precipitates on the surface of the bonding filler during the treatment by plasma technology at low temperature. At the same time, there is often a binder on the binder filler such as Ag slurry overflow component pollution. Using low-temperature plasma technology to remove these contaminants prior to the thermo-pressure interlocking process, the quality of the thermo-pressure interlocking can be greatly improved. In addition, due to the improved wettability of both the substrate and bare wafer surfaces, the LCD-COG module also has improved bond tiGHTNESS, as well as the problem of wire corrosion.

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