Prospect of Plasma Etching in New Material Etching

• Categories:Industry News
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2021-01-29
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(Summary description)In order to keep up with Moore's Law, IC manufacturing after 5nm is likely to abandon the traditional silicon chip process and introduce a new material, plasma etching, as an alternative. It now seems likely that 5nm will be the last stop for silicon chip technology. In fact, concerns about Moore's Law have grown in recent years as the limits on silicon chips have edged closer. To keep up with Moore's Law, transistors must shrink in size. But as the transistor size shrink, the channel between the source and the grid has been shortened, when the channel to a certain extent, the quantum tunneling effect will become very easy, in other words, even if no applied voltage, the plasma etching source and drain can be thought of as a communication, they lost the action of the switch transistor, therefore can't realize logic circuit. From now on, the 7nm process is possible, the 5nm process has certain technical support, and the 3nm process is the physical limit of the silicon semiconductor process. Therefore, the replacement material of silicon for 5nm post-plasma etching process has long attracted the attention of various commercial giants and research institutions. At present, III-V compound semiconductor, graphene, carbon nanotubes, such as the voice of the industry is high, the current general view is to use germanium in PMOS, nano NMOS with indium phosphate. For III-V compounds, IMEC(Microelectronics Research Center, whose members include Intel Corp., IBM Corp., TSMC, Samsung and other semiconductor giants) has long announced the success of the finFET compound semiconductor by integrating phosphate and arsenide imiters on a plasma etched 300mm(22nm) wafer. III-V compound semiconductors have no significant physical defects compared to other alternative materials, and similar to the current silicon chip process, many existing plasma etching technologies can be applied to new materials, so they are also considered ideal materials to continue to replace silicon beyond 5nm. Graphene material is regarded as a kind of dream, it has the very strong conductivity, can be bent, the intensity is high, these features can be used in every field, even has the potential to change the future of the world, there are many people regard it as is the future of the replace silicon semiconductor materials, graphene is known as the silicon after the "magic material" of The Times, is expected in 2028 to join technology roadmap for semiconductors (ITRS). Carbon nanotubes can improve the integration of the transistors per unit area number (such as 2.5 D, 3 D stacked package, currently in NAND, DRAM, such as storage products for many applications, but for IC chip, heat problem is bad), in the future may even have a photonic computing, quantum computing, such as reverse the computer appear Moore's law.