Influence of plasma etching on HCI in plasma equipment

• Categories:Company Dynamics
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2021-01-05
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(Summary description)The HCI in the reliability of plasma etching process refers to the degradation of device performance caused by high-energy electrons and holes injected into gate oxide layer. The interface state and oxide layer trap charges will be generated during injection, causing damage to the oxide layer. With the deepening of the damage degree, the current and voltage characteristics of the device will change. When the variation of device parameters exceeds a certain limit, the device will fail. The inhibition of hot carrier effect depends mainly on the choice of suitable source and substrate concentration, and the method of Lightly Doped Drain area (LDD) can be used to suppress the hot carrier effect quite well. Li studied plasma equipment such as plasma related process after injury grid oxide layer, the HCI performance significantly worse, this is because in the process of plasma equipment of plasma technology, grid will flow through a certain amount of current in the oxygen, the charging current will cause new oxide traps and interface state, when the hot carrier injection of oxide layer damage more easily.