Operation method of reactive ion etcher made by plasma cleaning machine manufacturer

• Categories:Company Dynamics
• Author:plasma cleaning machine-surface treatment equipment-CRF plasma machine-Sing Fung Intelligent Manufacturing
• Origin:
• Time of issue:2020-12-25
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(Summary description)According to the RF (frequency-emitted) magnetic field applied to the chip disk, the plasma technology is started in the manufacturer system of the plasma cleaning machine. The field is generally set at a frequency of 13.56 MHZ and is released in the hundreds of Thales. The oscillating electrostatic field can weaken the molecular structure of electrolyte vapors according to the separation from electronic devices, which then leads to the plasma technology of reactive ion etcher.   In each of the circulatory systems present, the electronics accelerate from left to right in the chamber, sometimes colliding with the upper wall and chip disk of the chamber. In addition, in response to RF electrostatic field of reactive ion etcher, the relativity of ionization motion with higher quality is less. As the electronics are digested and absorbed into the chamber walls, they are simply sent to the road and remain in place throughout the system. Little do they know that the electronics stacked on the chip platters are positively charged because of their DC protection. The accumulation of such positive charges on the disc creates a large negative operating voltage, typically several hundred volts. Because of the relatively high concentration of positive ions compared with free electrons, plasma cleaning machine manufacturers plasma technology itself slightly positive.   Because of the large working voltage difference, the positive ions tend to drift toward the chip disk, where they collide with the test pieces of the etching process. Ionization produces chemical changes with the raw materials on the surface of the sample, but some of the raw materials can also be knocked out according to the transfer of some mechanical energy. Because the REion-etcher reflects most of the vertical transfer of ionization, it reflects that ionization etching can produce a very wide variety of etching process galleries, in contrast to the typical anisotropic gallery of wet organic chemical etching process.   The etching process standard in RIE system of plasma cleaning machine manufacturer is quite large due to many main processing parameters, such as working pressure, gas pressure and RF output power. The improved version number of RIE is a deep reflection of the ionizing etching process used to exploit shallow features.